Manufacturer
Microchip
Description
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 Ohm3 TO-39 BAG | Microchip Technology Inc. 2N6661
Datasheet
Type
Projected EOL Date
Ambient Temperature Range High
Case/Package
Contact Plating
Continuous Drain Current (ID)
Country of Origin
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Rds On Max
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
2034-01-12
150 °C
TO-39
Gold
350 mA
Thailand
90 V
4 Ω
90 V
Single
20 V
6.604 mm
50 pF
Production (Last Updated: 4 years ago)
150 °C
6.25 W
-55 °C
Through Hole
1
3
Bulk
6.25 W
4 Ω
Compliant
8542390000, 8542390000|8542390000, 8542390000|8542390000|8542390000, 8542390000|8542390000|8542390000|8542390000
800 mV
10 ns
10 ns
MOQ : 1
Per Unit Price
₹1512.53
Total Price
₹1512.53
Ships in 7-10 days from Bengaluru
1
₹1512.53
₹1512.53
10
₹1512.80
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25
₹1386.26
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50
₹1386.26
₹69313.14
100
₹1334.88
₹133487.59
Type
Projected EOL Date
Ambient Temperature Range High
Case/Package
Contact Plating
Continuous Drain Current (ID)
Country of Origin
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Rds On Max
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
2034-01-12
150 °C
TO-39
Gold
350 mA
Thailand
90 V
4 Ω
90 V
Single
20 V
6.604 mm
50 pF
Production (Last Updated: 4 years ago)
150 °C
6.25 W
-55 °C
Through Hole
1
3
Bulk
6.25 W
4 Ω
Compliant
8542390000, 8542390000|8542390000, 8542390000|8542390000|8542390000, 8542390000|8542390000|8542390000|8542390000
800 mV
10 ns
10 ns
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