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2N6661

Manufacturer

Microchip

Description

MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 Ohm3 TO-39 BAG | Microchip Technology Inc. 2N6661

Datasheet

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Product Attributes

Type

Projected EOL Date

Ambient Temperature Range High

Case/Package

Contact Plating

Continuous Drain Current (ID)

Country of Origin

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Element Configuration

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Lifecycle Status

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Channels

Number of Pins

Packaging

Power Dissipation

Rds On Max

RoHS

Schedule B

Threshold Voltage

Turn-Off Delay Time

Turn-On Delay Time

Description

2034-01-12

150 °C

TO-39

Gold

350 mA

Thailand

90 V

4 Ω

90 V

Single

20 V

6.604 mm

50 pF

Production (Last Updated: 4 years ago)

150 °C

6.25 W

-55 °C

Through Hole

1

3

Bulk

6.25 W

4 Ω

Compliant

8542390000, 8542390000|8542390000, 8542390000|8542390000|8542390000, 8542390000|8542390000|8542390000|8542390000

800 mV

10 ns

10 ns

In Stock


Quantity

MOQ : 1

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increment quantity

Per Unit Price

₹1512.53

Total Price

₹1512.53


delivery

Ships in 7-10 days from Bengaluru

Add to List

Quantity

Unit Price

Ext. Price

1

1512.53

1512.53

10

1512.80

15127.96

25

1386.26

34656.57

50

1386.26

69313.14

100

1334.88

133487.59

Product Attributes

Type

Projected EOL Date

Ambient Temperature Range High

Case/Package

Contact Plating

Continuous Drain Current (ID)

Country of Origin

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Element Configuration

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Lifecycle Status

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Channels

Number of Pins

Packaging

Power Dissipation

Rds On Max

RoHS

Schedule B

Threshold Voltage

Turn-Off Delay Time

Turn-On Delay Time

Description

2034-01-12

150 °C

TO-39

Gold

350 mA

Thailand

90 V

4 Ω

90 V

Single

20 V

6.604 mm

50 pF

Production (Last Updated: 4 years ago)

150 °C

6.25 W

-55 °C

Through Hole

1

3

Bulk

6.25 W

4 Ω

Compliant

8542390000, 8542390000|8542390000, 8542390000|8542390000|8542390000, 8542390000|8542390000|8542390000|8542390000

800 mV

10 ns

10 ns

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