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2SA1163-BL,LF

Manufacturer

Toshiba

Description

Bipolar Transistors - BJT Transistor for Low Freq. Amplification

Product Attributes

Type

Case/Package

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Voltage (VCEO)

Emitter Base Voltage (VEBO)

Max Breakdown Voltage

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Pins

Packaging

RoHS

Schedule B

Transition Frequency

Description

TO-236-3

120 V

120 V

300 mV

5 V

120 V

100 mA

125 °C

150 mW

-55 °C

Surface Mount

3

Cut Tape (CT)

Compliant

8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080

100 MHz

In Stock


Quantity

MOQ : 5

decrement quantity
increment quantity

Per Unit Price

₹24.01

Total Price

₹120.04


delivery

Ships in 7-10 days from Bengaluru

Add to List

Quantity

Unit Price

Ext. Price

1

120.04

120.04

10

14.58

145.83

25

14.57

364.13

50

14.57

728.25

100

9.06

906.10

500

6.65

3327.39

1000

5.87

5874.94

Product Attributes

Type

Case/Package

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Voltage (VCEO)

Emitter Base Voltage (VEBO)

Max Breakdown Voltage

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Pins

Packaging

RoHS

Schedule B

Transition Frequency

Description

TO-236-3

120 V

120 V

300 mV

5 V

120 V

100 mA

125 °C

150 mW

-55 °C

Surface Mount

3

Cut Tape (CT)

Compliant

8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080

100 MHz

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