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2SA1163-BL,LF
Manufacturer
Toshiba
Description
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Product Attributes
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Voltage (VCEO)
Emitter Base Voltage (VEBO)
Max Breakdown Voltage
Max Collector Current
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Packaging
RoHS
Schedule B
Transition Frequency
Description
TO-236-3
120 V
120 V
300 mV
5 V
120 V
100 mA
125 °C
150 mW
-55 °C
Surface Mount
3
Cut Tape (CT)
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
100 MHz
₹27.22
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
10
₹16.65
₹166.53
25
₹16.67
₹416.78
50
₹16.65
₹832.65
100
₹10.37
₹1036.69
500
₹7.61
₹3807.32
1000
₹6.72
₹6723.42
Product Attributes
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Voltage (VCEO)
Emitter Base Voltage (VEBO)
Max Breakdown Voltage
Max Collector Current
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Packaging
RoHS
Schedule B
Transition Frequency
Description
TO-236-3
120 V
120 V
300 mV
5 V
120 V
100 mA
125 °C
150 mW
-55 °C
Surface Mount
3
Cut Tape (CT)
Compliant
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
100 MHz
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