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2SA1943N(S1,E,S)

Manufacturer

Toshiba

Description

Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon

Datasheet

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Product Attributes

Type

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Continuous Collector Current

Element Configuration

Emitter Base Voltage (VEBO)

Gain Bandwidth Product

hFE Min

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Polarity

RoHS

Schedule B

Transition Frequency

Weight

Description

-230 V

230 V

-1.1 V

3 V

-15 A

Single

-5 V

30 MHz

35

15 A

150 °C

150 W

-55 °C

Through Hole

PNP

Compliant

8541290080

30 MHz

6.961991 g

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Product Attributes

Type

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Continuous Collector Current

Element Configuration

Emitter Base Voltage (VEBO)

Gain Bandwidth Product

hFE Min

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Polarity

RoHS

Schedule B

Transition Frequency

Weight

Description

-230 V

230 V

-1.1 V

3 V

-15 A

Single

-5 V

30 MHz

35

15 A

150 °C

150 W

-55 °C

Through Hole

PNP

Compliant

8541290080

30 MHz

6.961991 g

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