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2SC2713-GR,LF

Manufacturer

Toshiba

Description

Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp

Product Attributes

Type

Case/Package

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Voltage (VCEO)

Emitter Base Voltage (VEBO)

Max Breakdown Voltage

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Packaging

RoHS

Schedule B

Transition Frequency

Description

TO-236-3

120 V

120 V

300 mV

5 V

120 V

100 mA

125 °C

150 mW

-55 °C

Surface Mount

Tape & Reel (TR)

Compliant

8541210080

100 MHz

23.42

In Stock


Quantity
Shipment
delivery

Ships in 7-10 days

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Quantity

Unit Price

Ext. Price

10

14.09

140.91

25

14.09

352.27

50

14.09

704.55

100

8.76

875.65

500

6.41

3207.07

1000

5.58

5580.59

Product Attributes

Type

Case/Package

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Voltage (VCEO)

Emitter Base Voltage (VEBO)

Max Breakdown Voltage

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Packaging

RoHS

Schedule B

Transition Frequency

Description

TO-236-3

120 V

120 V

300 mV

5 V

120 V

100 mA

125 °C

150 mW

-55 °C

Surface Mount

Tape & Reel (TR)

Compliant

8541210080

100 MHz

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