2SD1047
Manufacturer
STMicroelectronics
Description
Bipolar Transistors - BJT High power NPN epitaxial planar bipolar transistor
Datasheet
DownloadProduct Attributes
Type
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
hFE Min
Lead Free
Lifecycle Status
Max Collector Current
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
Radiation Hardening
REACH SVHC
RoHS
Transition Frequency
Description
200 V
140 V
700 mV
140 V
Tin
6 V
20 MHz
20 MHz
23.6 mm
50
Lead Free
Production (Last Updated: 3 years ago)
12 A
150 °C
150 °C
100 W
-65 °C
Through Hole
1
3
NPN
100 W
No
No
Compliant
20 MHz
In Stock
Quantity
MOQ : 1
Per Unit Price
₹529.96
Total Price
₹529.96
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹529.96
₹529.96
10
₹529.96
₹5299.63
25
₹529.96
₹13249.08
Product Attributes
Type
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
hFE Min
Lead Free
Lifecycle Status
Max Collector Current
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
Radiation Hardening
REACH SVHC
RoHS
Transition Frequency
Description
200 V
140 V
700 mV
140 V
Tin
6 V
20 MHz
20 MHz
23.6 mm
50
Lead Free
Production (Last Updated: 3 years ago)
12 A
150 °C
150 °C
100 W
-65 °C
Through Hole
1
3
NPN
100 W
No
No
Compliant
20 MHz
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