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AFT05MS004NT1

Manufacturer

NXP Semiconductors

Description

AFT05MSx Series 30 V 520 MHz N-Channel RF Power LDMOS Transistor - SOT-89-3

Datasheet

download datasheetDownload

Product Attributes

Type

Case/Package

Contact Plating

Frequency

Gain

Gate to Source Voltage (Vgs)

Height

Max Junction Temperature (Tj)

Max Operating Temperature

Min Operating Temperature

Mount

Number of Channels

Number of Pins

Output Power

Packaging

Power Dissipation

RoHS

Schedule B

Test Current

Test Voltage

Voltage Rating

Description

SOT-89-3

Tin

520 MHz

20.9 dB

12 V

1.6 mm

150 °C

150 °C

-40 °C

Surface Mount

1

3

4.9 W

Tape & Reel (TR)

28 W

Compliant

8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

100 mA

7.5 V

30 V

232.96

In Stock


Quantity
Shipment
delivery

Ships in 7-10 days

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Quantity

Unit Price

Ext. Price

1

232.96

232.96

10

158.66

1586.60

25

158.66

3966.49

50

158.66

7932.98

100

135.02

13502.33

500

132.51

66254.40

1000

115.53

115527.90

Product Attributes

Type

Case/Package

Contact Plating

Frequency

Gain

Gate to Source Voltage (Vgs)

Height

Max Junction Temperature (Tj)

Max Operating Temperature

Min Operating Temperature

Mount

Number of Channels

Number of Pins

Output Power

Packaging

Power Dissipation

RoHS

Schedule B

Test Current

Test Voltage

Voltage Rating

Description

SOT-89-3

Tin

520 MHz

20.9 dB

12 V

1.6 mm

150 °C

150 °C

-40 °C

Surface Mount

1

3

4.9 W

Tape & Reel (TR)

28 W

Compliant

8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

100 mA

7.5 V

30 V

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