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AUIRFN8459TR
Manufacturer
Infineon
Description
40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package, DUAL PQFN 5X6 8L, RoHS
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Rds On Max
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
50 A
40 V
4.8 mΩ
40 V
Dual
42 ns
20 V
1.2 mm
2.25 nF
Production (Last Updated: 5 years ago)
175 °C
175 °C
50 W
-55 °C
Surface Mount
2
8
5.9 mΩ
4000
Tape & Reel
50 W
5.9 mΩ
4.8 mΩ
55 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
25 ns
10 ns
₹325.74
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹325.74
₹325.74
10
₹243.76
₹2437.56
25
₹243.79
₹6094.81
50
₹243.79
₹12189.63
100
₹237.91
₹23790.92
500
₹237.91
₹118954.57
1000
₹174.27
₹174270.90
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Rds On Max
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
50 A
40 V
4.8 mΩ
40 V
Dual
42 ns
20 V
1.2 mm
2.25 nF
Production (Last Updated: 5 years ago)
175 °C
175 °C
50 W
-55 °C
Surface Mount
2
8
5.9 mΩ
4000
Tape & Reel
50 W
5.9 mΩ
4.8 mΩ
55 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
25 ns
10 ns
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