logo
logo
left chevron
right chevron

BCP69-25,115

Manufacturer

Nexperia

Description

Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon

Datasheet

download datasheetDownload

Product Attributes

Type

Case/Package

China RoHS

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Contact Plating

Element Configuration

Emitter Base Voltage (VEBO)

Forward Current

Forward Voltage

Frequency

Gain Bandwidth Product

Height

hFE Min

Length

Lifecycle Status

Manufacturer Lifecycle Status

Max Breakdown Voltage

Max Collector Current

Max Forward Surge Current (Ifsm)

Max Frequency

Max Operating Temperature

Max Power Dissipation

Max Repetitive Reverse Voltage (Vrrm)

Min Operating Temperature

Mount

Number of Elements

Number of Pins

Number of Terminals

Polarity

Power Dissipation

Radiation Hardening

REACH SVHC

RoHS

Schedule B

Transition Frequency

Width

Description

SC

Compliant

32 V

20 V

500 mV

20 V

Tin

Single

5 V

500 mA

550 mV

140 MHz

140 MHz

1.7 mm

160

6.7 mm

Production (Last Updated: 6 months ago)

RELEASED FOR SUPPLY (Last Updated: 6 months ago)

20 V

1 A

2 A

140 MHz

150 °C

1.35 W

40 V

-55 °C

Surface Mount

1

4

4

PNP

1.35 W

No

Yes

Compliant

8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

40 MHz

3.7 mm

In Stock


Quantity

MOQ : 3

decrement quantity
increment quantity

Per Unit Price

₹43.57

Total Price

₹130.71


delivery

Ships in 7-10 days from Bengaluru

Add to List

Quantity

Unit Price

Ext. Price

1

130.71

130.71

10

22.32

223.19

25

22.35

558.86

50

22.35

1117.72

100

12.56

1255.55

500

12.56

6279.53

1000

9.70

9704.73

Product Attributes

Type

Case/Package

China RoHS

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Contact Plating

Element Configuration

Emitter Base Voltage (VEBO)

Forward Current

Forward Voltage

Frequency

Gain Bandwidth Product

Height

hFE Min

Length

Lifecycle Status

Manufacturer Lifecycle Status

Max Breakdown Voltage

Max Collector Current

Max Forward Surge Current (Ifsm)

Max Frequency

Max Operating Temperature

Max Power Dissipation

Max Repetitive Reverse Voltage (Vrrm)

Min Operating Temperature

Mount

Number of Elements

Number of Pins

Number of Terminals

Polarity

Power Dissipation

Radiation Hardening

REACH SVHC

RoHS

Schedule B

Transition Frequency

Width

Description

SC

Compliant

32 V

20 V

500 mV

20 V

Tin

Single

5 V

500 mA

550 mV

140 MHz

140 MHz

1.7 mm

160

6.7 mm

Production (Last Updated: 6 months ago)

RELEASED FOR SUPPLY (Last Updated: 6 months ago)

20 V

1 A

2 A

140 MHz

150 °C

1.35 W

40 V

-55 °C

Surface Mount

1

4

4

PNP

1.35 W

No

Yes

Compliant

8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

40 MHz

3.7 mm

Other Parts in the same category

2SA1943N(S1,E,S)

2SA1943N(S1,E,S)

Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon

TIP122G

TIP122G

Bipolar junction transistor, NPN, 5 A, 100 ## Fehler ##, THT, TO-220, TIP122G

NSVTB60BDW1T1G

NSVTB60BDW1T1G

Pnp General Purpose And Npn Bias Resistor Transistor Combination/ Reel |Onsemi NSVTB60BDW1T1G

TTC5200(Q)

TTC5200(Q)

Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL

TTC5200

TTC5200

TRANS NPN 230V 15A TO-3PL / Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL

BC817-25,215

BC817-25,215

BC817 Series 45 V 500 mA SMT NPN General Purpose Transistor - SOT-23

orange wave graphic

prototype to production:
With you at every step

From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.

orange wave graphic