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BD241C

Manufacturer

STMicroelectronics

Description

Bipolar (BJT) Single Transistor, NPN, 100 V, 5 A, 40 W, TO-220, Through Hole

Datasheet

download datasheetDownload

Product Attributes

Type

Case/Package

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Contact Plating

Element Configuration

Emitter Base Voltage (VEBO)

Height

hFE Min

Length

Lifecycle Status

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Elements

Number of Pins

Polarity

Power Dissipation

Radiation Hardening

REACH SVHC

RoHS

Schedule B

Width

Description

TO-220

100 V

1.2 V

100 V

Tin

Single

5 V

9.15 mm

25

10.4 mm

Production (Last Updated: 4 years ago)

3 A

150 °C

40 W

-65 °C

Through Hole

1

3

NPN

40 W

No

No

Compliant

8541290080

4.6 mm

91.25

In Stock


Quantity
Shipment
delivery

Ships in 7-10 days

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Quantity

Unit Price

Ext. Price

10

31.93

319.33

25

31.92

797.88

50

31.92

1595.76

100

29.27

2927.09

500

29.27

14637.25

1000

20.66

20657.96

Product Attributes

Type

Case/Package

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Contact Plating

Element Configuration

Emitter Base Voltage (VEBO)

Height

hFE Min

Length

Lifecycle Status

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Elements

Number of Pins

Polarity

Power Dissipation

Radiation Hardening

REACH SVHC

RoHS

Schedule B

Width

Description

TO-220

100 V

1.2 V

100 V

Tin

Single

5 V

9.15 mm

25

10.4 mm

Production (Last Updated: 4 years ago)

3 A

150 °C

40 W

-65 °C

Through Hole

1

3

NPN

40 W

No

No

Compliant

8541290080

4.6 mm

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