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BFP740ESDH6327XTSA1

Manufacturer

Infineon

Description

Bipolar - RF Transistor, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, 160

Datasheet

download datasheetDownload

Product Attributes

Type

Case/Package

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Voltage (VCEO)

Contact Plating

Frequency

Gain

Halogen Free

Lead Free

Lifecycle Status

Max Breakdown Voltage

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Noise Figure

Number of Elements

Number of Pins

Package Quantity

Packaging

Polarity

Power Dissipation

Power Gain

RoHS

Transition Frequency

Description

SOT

4.9 V

4.7 V

4.2 V

Tin

45 GHz

8.5 dB

Halogen Free

Lead Free

Production (Last Updated: 4 years ago)

4.7 V

35 mA

150 °C

160 mW

-55 °C

Surface Mount

0.6 dB

1

4

3000

Tape & Reel

NPN

160 mW

27 dB

Compliant

45 GHz

45.85

In Stock


Quantity
Shipment
delivery

Ships in 7-10 days

Quantity

Unit Price

Ext. Price

10

28.64

286.43

25

28.64

716.08

50

28.64

1432.16

100

23.25

2325.26

500

19.31

9656.85

1000

17.47

17469.20

Product Attributes

Type

Case/Package

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Voltage (VCEO)

Contact Plating

Frequency

Gain

Halogen Free

Lead Free

Lifecycle Status

Max Breakdown Voltage

Max Collector Current

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Noise Figure

Number of Elements

Number of Pins

Package Quantity

Packaging

Polarity

Power Dissipation

Power Gain

RoHS

Transition Frequency

Description

SOT

4.9 V

4.7 V

4.2 V

Tin

45 GHz

8.5 dB

Halogen Free

Lead Free

Production (Last Updated: 4 years ago)

4.7 V

35 mA

150 °C

160 mW

-55 °C

Surface Mount

0.6 dB

1

4

3000

Tape & Reel

NPN

160 mW

27 dB

Compliant

45 GHz

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