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BFT46,215

Manufacturer

NXP Semiconductors

Description

Jfet Transistor, Junction Field Effect, Jfet, 200 A, 1.5 Ma, 2 V, Sot-23 Rohs Compliant: Yes

Datasheet

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Product Attributes

Type

Breakdown Voltage

Case/Package

Contact Plating

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Drain to Source Voltage (Vdss)

Element Configuration

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Lead Free

Length

Max Operating Temperature

Max Power Dissipation

Min Breakdown Voltage

Min Operating Temperature

Mount

Number of Pins

Output Power

Radiation Hardening

RoHS

Weight

Width

Description

25 V

SOT-23-3

Tin

10 mA

25 V

25 V

Single

-25 V

1 mm

5 pF

Lead Free

3 mm

150 °C

250 mW

25 V

-65 °C

Surface Mount

3

250 mW

No

Compliant

200.998119 mg

1.4 mm

54.07

Out of Stock


Quantity
Shipment
delivery

Ships in 7-10 days

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Quantity

Unit Price

Ext. Price

10

54.07

540.67

25

50.50

1262.60

50

50.50

2525.20

100

29.26

2926.45

500

22.52

11261.75

1000

19.92

19923.40

Product Attributes

Type

Breakdown Voltage

Case/Package

Contact Plating

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Drain to Source Voltage (Vdss)

Element Configuration

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Lead Free

Length

Max Operating Temperature

Max Power Dissipation

Min Breakdown Voltage

Min Operating Temperature

Mount

Number of Pins

Output Power

Radiation Hardening

RoHS

Weight

Width

Description

25 V

SOT-23-3

Tin

10 mA

25 V

25 V

Single

-25 V

1 mm

5 pF

Lead Free

3 mm

150 °C

250 mW

25 V

-65 °C

Surface Mount

3

250 mW

No

Compliant

200.998119 mg

1.4 mm

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