




Manufacturer
Texas Instruments
Description
30-V, N channel NexFET power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm 6-WSON -55 to 150
Datasheet
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Number of Pins
Power Dissipation
RoHS
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
10 A
30 V
13.9 mΩ
30 V
Single
10 V
800 µm
2 mm
Production (Last Updated: 3 days ago)
ACTIVE (Last Updated: 3 days ago)
150 °C
150 °C
-55 °C
1
6
2.5 W
Compliant
750 µm
13 ns
5 ns
2 mm
₹50.78
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
10
₹36.51
₹365.08
25
₹36.51
₹912.71
50
₹36.53
₹1826.34
100
₹25.16
₹2516.25
500
₹19.31
₹9655.08
1000
₹17.32
₹17320.03
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Number of Pins
Power Dissipation
RoHS
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
10 A
30 V
13.9 mΩ
30 V
Single
10 V
800 µm
2 mm
Production (Last Updated: 3 days ago)
ACTIVE (Last Updated: 3 days ago)
150 °C
150 °C
-55 °C
1
6
2.5 W
Compliant
750 µm
13 ns
5 ns
2 mm

From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.
