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CSD18510Q5B
Manufacturer
Texas Instruments
Description
40-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm 8-VSON-CLIP -55 to 150
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Number of Pins
Power Dissipation
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
42 A
40 V
790 µΩ
40 V
Single
20 V
0 m
5 mm
Production (Last Updated: 1 week ago)
ACTIVE (Last Updated: 1 week ago)
150 °C
150 °C
-55 °C
1
8
3.1 W
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
950 µm
44 ns
8 ns
5 mm
₹308.36
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹308.36
₹308.36
10
₹200.29
₹2002.93
25
₹200.31
₹5007.80
50
₹200.31
₹10015.59
100
₹138.85
₹13885.13
500
₹117.29
₹58645.10
1000
₹112.59
₹112590.75
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Number of Pins
Power Dissipation
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
42 A
40 V
790 µΩ
40 V
Single
20 V
0 m
5 mm
Production (Last Updated: 1 week ago)
ACTIVE (Last Updated: 1 week ago)
150 °C
150 °C
-55 °C
1
8
3.1 W
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
950 µm
44 ns
8 ns
5 mm
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