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DA3S101F0L
Manufacturer
Panasonic
Description
SILICON EPITAXIAL PLANAR TYPE DIODE Mixer Diode, Very High Frequency, Silicon
Datasheet
DownloadProduct Attributes
Type
Average Rectified Current
Case/Package
Forward Current
Forward Voltage
Height
Length
Max Forward Surge Current (Ifsm)
Max Operating Temperature
Max Repetitive Reverse Voltage (Vrrm)
Max Reverse Leakage Current
Max Reverse Voltage (DC)
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Number of Terminals
Peak Non-Repetitive Surge Current
Peak Reverse Current
REACH SVHC
Recovery Time
Reverse Recovery Time
RoHS
Schedule B
Width
Description
100 mA
SOT-490
65 mA
1.2 V
700 µm
1.6 mm
325 mA
150 °C
80 V
100 nA
80 V
-55 °C
Surface Mount
2
3
3
500 mA
100 nA
Yes
3 ns
3 ns
Compliant
8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070
850 µm
Out of Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
Product Attributes
Type
Average Rectified Current
Case/Package
Forward Current
Forward Voltage
Height
Length
Max Forward Surge Current (Ifsm)
Max Operating Temperature
Max Repetitive Reverse Voltage (Vrrm)
Max Reverse Leakage Current
Max Reverse Voltage (DC)
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Number of Terminals
Peak Non-Repetitive Surge Current
Peak Reverse Current
REACH SVHC
Recovery Time
Reverse Recovery Time
RoHS
Schedule B
Width
Description
100 mA
SOT-490
65 mA
1.2 V
700 µm
1.6 mm
325 mA
150 °C
80 V
100 nA
80 V
-55 °C
Surface Mount
2
3
3
500 mA
100 nA
Yes
3 ns
3 ns
Compliant
8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070
850 µm
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