Manufacturer
Diodes Inc.
Description
MOSFET, AEC-Q101, P-CH, -10.3A, -40V; Tr; Transistor Polarity: P Channel; Drain Source Voltage Vds: 40V;
Datasheet
Type
Capacitance
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Manufacturer Package Identifier
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Rds On Max
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
2.569 nF
-10.3 A
-40 V
9.4 mΩ
-40 V
83 ns
20 V
850 µm
3.426 nF
150 °C
150 °C
1 W
POWERDI3333-8
-55 °C
Surface Mount
1
8
Tape & Reel (TR)
1 W
13 mΩ
20 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
-3 V
126 ns
5.3 ns
MOQ : 2
Minimum Qty : 2
Per Unit Price
₹89.54
Total Price
₹179.09
Ships in 7-10 days from Bengaluru
1
₹179.97
₹179.97
10
₹64.20
₹642.00
25
₹64.20
₹1605.00
50
₹54.38
₹2718.87
100
₹44.55
₹4455.48
500
₹39.84
₹19921.84
1000
₹35.87
₹35870.25
Type
Capacitance
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Manufacturer Package Identifier
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Rds On Max
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
2.569 nF
-10.3 A
-40 V
9.4 mΩ
-40 V
83 ns
20 V
850 µm
3.426 nF
150 °C
150 °C
1 W
POWERDI3333-8
-55 °C
Surface Mount
1
8
Tape & Reel (TR)
1 W
13 mΩ
20 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
-3 V
126 ns
5.3 ns
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.