DMT6007LFG-7
Manufacturer
Diodes Inc.
Description
Transistor, N-channel, enhancement mode MOSFET, 60V, 12A, PWRDI3333-8 | Diodes Inc DMT6007LFG-7
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Manufacturer Package Identifier
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Power Dissipation
Rds On Max
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
15 A
60 V
4.5 mΩ
60 V
20 V
850 µm
2.09 nF
150 °C
150 °C
2.2 W
POWERDI3333-8
-55 °C
Surface Mount
1
8
2.2 W
6 mΩ
Compliant
23.4 ns
5.7 ns
In Stock
Quantity
MOQ : 1
Per Unit Price
₹125.38
Total Price
₹125.38
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹125.38
₹125.38
10
₹88.21
₹882.09
25
₹88.19
₹2204.77
50
₹76.33
₹3816.69
100
₹63.48
₹6348.31
500
₹54.82
₹27412.26
1000
₹48.60
₹48597.45
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Manufacturer Package Identifier
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Power Dissipation
Rds On Max
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
15 A
60 V
4.5 mΩ
60 V
20 V
850 µm
2.09 nF
150 °C
150 °C
2.2 W
POWERDI3333-8
-55 °C
Surface Mount
1
8
2.2 W
6 mΩ
Compliant
23.4 ns
5.7 ns
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