logo
logo
left chevron
right chevron

FDMS8018

Manufacturer

onsemi

Description

Power MOSFET, N Channel, 30 V, 175 A, 1.8 Milliohms, Power 56, 8 Pins, Surface Mount

Datasheet

download datasheetDownload

Product Attributes

Type

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Element Configuration

Fall Time

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Length

Lifecycle Status

Manufacturer Lifecycle Status

Max Junction Temperature (Tj)

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Channels

Number of Elements

Number of Pins

Power Dissipation

Radiation Hardening

Rds On Max

Rise Time

RoHS

Schedule B

Turn-Off Delay Time

Turn-On Delay Time

Weight

Width

Description

30 A

30 V

1.5 mΩ

30 V

Single

4.8 ns

20 V

1.1 mm

5.235 nF

5.1 mm

Production (Last Updated: 3 years ago)

ACTIVE (Last Updated: 3 years ago)

150 °C

150 °C

2.5 W

-55 °C

Surface Mount

1

1

8

83 W

No

1.8 mΩ

7.3 ns

Compliant

8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080

38 ns

15 ns

68.1 mg

6.25 mm

In Stock


Quantity

MOQ : 1

decrement quantity
increment quantity

Per Unit Price

₹161.81

Total Price

₹161.81


delivery

Ships in 7-10 days from Bengaluru

Add to List

Quantity

Unit Price

Ext. Price

1

161.81

161.81

10

114.51

1145.11

25

114.51

2862.79

50

114.51

5725.57

100

85.69

8568.56

500

81.44

40718.85

1000

73.07

73070.90

Product Attributes

Type

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Element Configuration

Fall Time

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Length

Lifecycle Status

Manufacturer Lifecycle Status

Max Junction Temperature (Tj)

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Channels

Number of Elements

Number of Pins

Power Dissipation

Radiation Hardening

Rds On Max

Rise Time

RoHS

Schedule B

Turn-Off Delay Time

Turn-On Delay Time

Weight

Width

Description

30 A

30 V

1.5 mΩ

30 V

Single

4.8 ns

20 V

1.1 mm

5.235 nF

5.1 mm

Production (Last Updated: 3 years ago)

ACTIVE (Last Updated: 3 years ago)

150 °C

150 °C

2.5 W

-55 °C

Surface Mount

1

1

8

83 W

No

1.8 mΩ

7.3 ns

Compliant

8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080

38 ns

15 ns

68.1 mg

6.25 mm

Other Parts in the same category

IRF540NSTRLPBF

IRF540NSTRLPBF

Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel

IRFZ44NPBF

IRFZ44NPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 17.5 Milliohms; ID 49A; TO-220AB; PD 94W; -55deg

IRFZ44NSTRLPBF

IRFZ44NSTRLPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 17.5 Milliohms; ID 49A; D2Pak; PD 94W; VGS +/-20

IRFZ44NLPBF

IRFZ44NLPBF

Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262

AUIRFZ44N

AUIRFZ44N

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

CSD17575Q3

CSD17575Q3

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm 8-VSON-CLIP

orange wave graphic

prototype to production:
With you at every step

From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.

orange wave graphic