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FFSH20120ADN-F085
Manufacturer
onsemi
Description
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, TO-247-3L
Datasheet
DownloadProduct Attributes
Type
Capacitance
China RoHS
Forward Current
Forward Voltage
Height
Lifecycle Status
Manufacturer Lifecycle Status
Max Forward Surge Current (Ifsm)
Max Junction Temperature (Tj)
Max Operating Temperature
Max Output Current
Max Power Dissipation
Max Repetitive Reverse Voltage (Vrrm)
Min Operating Temperature
Number of Elements
Number of Terminals
Peak Reverse Current
REACH SVHC
Reverse Standoff Voltage
Reverse Voltage
RoHS
Schedule B
Description
612 pF
Non-Compliant
20 A
1.75 V
24.75 mm
Production (Last Updated: 4 years ago)
ACTIVE (Last Updated: 4 years ago)
96 A
175 °C
175 °C
15 A
150 W
1.2 kV
-55 °C
2
3
200 µA
No
1.2 kV
1.2 kV
Compliant
8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080
₹867.42
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹867.42
₹867.42
10
₹867.05
₹8670.54
25
₹867.05
₹21676.35
50
₹733.13
₹36656.73
100
₹729.85
₹72984.98
Product Attributes
Type
Capacitance
China RoHS
Forward Current
Forward Voltage
Height
Lifecycle Status
Manufacturer Lifecycle Status
Max Forward Surge Current (Ifsm)
Max Junction Temperature (Tj)
Max Operating Temperature
Max Output Current
Max Power Dissipation
Max Repetitive Reverse Voltage (Vrrm)
Min Operating Temperature
Number of Elements
Number of Terminals
Peak Reverse Current
REACH SVHC
Reverse Standoff Voltage
Reverse Voltage
RoHS
Schedule B
Description
612 pF
Non-Compliant
20 A
1.75 V
24.75 mm
Production (Last Updated: 4 years ago)
ACTIVE (Last Updated: 4 years ago)
96 A
175 °C
175 °C
15 A
150 W
1.2 kV
-55 °C
2
3
200 µA
No
1.2 kV
1.2 kV
Compliant
8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080
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