FGA60N65SMD
Manufacturer
onsemi
Description
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P
Datasheet
DownloadProduct Attributes
Type
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Continuous Collector Current
Element Configuration
Height
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Collector Current
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Power Dissipation
Radiation Hardening
REACH SVHC
Reverse Recovery Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
650 V
1.9 V
650 V
120 A
Single
23.8 mm
Lead Free
15.8 mm
Production (Last Updated: 4 years ago)
ACTIVE (Last Updated: 4 years ago)
120 A
175 °C
175 °C
600 W
-55 °C
Through Hole
3
600 W
No
No
47 ns
Compliant
104 ns
18 ns
6.401 g
5 mm
In Stock
Quantity
MOQ : 1
Minimum Qty : 1
Per Unit Price
₹448.28
Total Price
₹448.28
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹448.28
₹448.28
10
₹271.59
₹2715.87
25
₹271.59
₹6789.69
50
₹271.59
₹13579.37
100
₹261.07
₹26106.93
500
₹261.07
₹130534.65
1000
₹293.57
₹293569.69
Product Attributes
Type
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Continuous Collector Current
Element Configuration
Height
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Collector Current
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Power Dissipation
Radiation Hardening
REACH SVHC
Reverse Recovery Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
650 V
1.9 V
650 V
120 A
Single
23.8 mm
Lead Free
15.8 mm
Production (Last Updated: 4 years ago)
ACTIVE (Last Updated: 4 years ago)
120 A
175 °C
175 °C
600 W
-55 °C
Through Hole
3
600 W
No
No
47 ns
Compliant
104 ns
18 ns
6.401 g
5 mm
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