GP2S60B
Manufacturer
Sharp
Description
SMT Phototransistor output Compact Reflective Photo interrupter
Datasheet
DownloadProduct Attributes
Type
Case/Package
Collector Emitter Breakdown Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Fall Time
Forward Current
Forward Voltage
Lead Free
Max Breakdown Voltage
Max Collector Current
Max Operating Temperature
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Output Type
Power Dissipation
Radiation Hardening
Response Time
Reverse Breakdown Voltage
Reverse Voltage
Rise Time
RoHS
Sensing Distance
Wavelength
Description
SMD/SMT
35 V
35 V
Gold
20 µs
20 mA
1.2 V
Lead Free
35 V
20 mA
85 °C
-25 °C
Surface Mount
1
4
Phototransistor
100 mW
No
20 µs
6 V
6 V
20 µs
Compliant
711.2 µm
950 nm
In Stock
Quantity
MOQ : 2
Per Unit Price
₹54.24
Total Price
₹108.48
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹108.48
₹108.48
10
₹43.93
₹439.26
25
₹43.96
₹1099.05
50
₹43.94
₹2197.21
100
₹41.52
₹4151.68
500
₹36.83
₹18415.33
1000
₹35.20
₹35197.20
Product Attributes
Type
Case/Package
Collector Emitter Breakdown Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Fall Time
Forward Current
Forward Voltage
Lead Free
Max Breakdown Voltage
Max Collector Current
Max Operating Temperature
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Output Type
Power Dissipation
Radiation Hardening
Response Time
Reverse Breakdown Voltage
Reverse Voltage
Rise Time
RoHS
Sensing Distance
Wavelength
Description
SMD/SMT
35 V
35 V
Gold
20 µs
20 mA
1.2 V
Lead Free
35 V
20 mA
85 °C
-25 °C
Surface Mount
1
4
Phototransistor
100 mW
No
20 µs
6 V
6 V
20 µs
Compliant
711.2 µm
950 nm
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