Cart%2Fimages%2F1_Toshiba-GT50JR2228STA12CE2CS29.jpg&w=640&q=75)
%2Fimages%2F1_Toshiba-GT50JR2228STA12CE2CS29.jpg&w=256&q=75)
%2Fimages%2F2_Toshiba-GT50JR2228STA12CE2CS29.jpg&w=256&q=75)
GT50JR22(STA1,E,S)
Manufacturer
Toshiba
Description
Trans IGBT Chip N-CH 600V 50A 230000mW 3-Pin(3+Tab) TO-3PN Magazine
Datasheet
DownloadProduct Attributes
Type
Collector Emitter Voltage (VCEO)
Element Configuration
Lead Free
Max Collector Current
Max Operating Temperature
Min Operating Temperature
Mount
Number of Pins
RoHS
Description
600 V
Single
Lead Free
50 A
175 °C
-55 °C
Through Hole
3
Compliant
₹609.53
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹609.53
₹609.53
10
₹366.45
₹3664.54
25
₹366.45
₹9161.34
50
₹366.45
₹18322.68
100
₹364.56
₹36455.97
Product Attributes
Type
Collector Emitter Voltage (VCEO)
Element Configuration
Lead Free
Max Collector Current
Max Operating Temperature
Min Operating Temperature
Mount
Number of Pins
RoHS
Description
600 V
Single
Lead Free
50 A
175 °C
-55 °C
Through Hole
3
Compliant
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.