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IMBF170R1K0M1XTMA1
Manufacturer
Infineon
Description
Silicon Carbide MOSFET, Single, N Channel, 5.2 A, 1.7 kV, 0.809 ohm, TO-263 (D2PAK)
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-263-7
5.2 A
1 Ω
1.7 kV
20 V
4.5 mm
175 °C
175 °C
-55 °C
1
68 W
Compliant
8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
20 ns
19 ns
₹467.93
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹467.93
₹467.93
10
₹300.82
₹3008.20
25
₹324.06
₹8101.41
50
₹309.38
₹15468.99
100
₹233.01
₹23301.39
500
₹233.01
₹116506.95
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-263-7
5.2 A
1 Ω
1.7 kV
20 V
4.5 mm
175 °C
175 °C
-55 °C
1
68 W
Compliant
8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
20 ns
19 ns
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