IMZA75R007M2HXKSA1
Manufacturer
Infineon
Description
N-Channel 840 V 172A (Tc) 483W (Tc) Through Hole PG-TO247-4-U02
Datasheet
DownloadProduct Attributes
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
SiCFET (Silicon Carbide)
840 V
172A (Tc)
15V, 20V
6.3mOhm @ 129.7A, 20V
5.6V @ 28.5mA
169 nC @ 18 V
+23V, -7V
5854 pF @ 500 V
483W (Tc)
-55°C ~ 175°C
Through Hole
PG-TO247-4-U02
TO-247-4
₹4166.57
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹4166.57
₹4166.57
10
₹3399.63
₹33996.34
25
₹3399.63
₹84990.84
50
₹3096.54
₹154827.15
100
₹3004.36
₹300435.90
Product Attributes
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
SiCFET (Silicon Carbide)
840 V
172A (Tc)
15V, 20V
6.3mOhm @ 129.7A, 20V
5.6V @ 28.5mA
169 nC @ 18 V
+23V, -7V
5854 pF @ 500 V
483W (Tc)
-55°C ~ 175°C
Through Hole
PG-TO247-4-U02
TO-247-4
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