

Manufacturer
Infineon
Description
N-Channel 840 V 40A (Tc) 142W (Tc) Through Hole PG-TO247-4-U02
Datasheet
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
SiCFET (Silicon Carbide)
840 V
40A (Tc)
15V, 20V
36mOhm @ 21.7A, 20V
5.6V @ 4.8mA
30 nC @ 18 V
+23V, -7V
1063 pF @ 500 V
142W (Tc)
-55°C ~ 175°C
Through Hole
PG-TO247-4-U02
TO-247-4
₹1320.08
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹1320.08
₹1320.08
10
₹933.50
₹9334.99
25
₹933.50
₹23337.48
50
₹894.71
₹44735.26
100
₹778.13
₹77812.97
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
SiCFET (Silicon Carbide)
840 V
40A (Tc)
15V, 20V
36mOhm @ 21.7A, 20V
5.6V @ 4.8mA
30 nC @ 18 V
+23V, -7V
1063 pF @ 500 V
142W (Tc)
-55°C ~ 175°C
Through Hole
PG-TO247-4-U02
TO-247-4

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