IPP60R190P6XKSA1
Manufacturer
Infineon
Description
INFINEON - IPP60R190P6XKSA1 - Power MOSFET, N Channel, 600 V, 20.2 A, 0.19 ohm, TO-220, Through Hole
Datasheet
DownloadProduct Attributes
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
190mOhm @ 7.6A, 10V
4.5V @ 630µA
37 nC @ 10 V
±20V
1750 pF @ 100 V
151W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
₹423.13
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹423.13
₹423.13
10
₹228.14
₹2281.38
25
₹228.14
₹5703.48
50
₹228.14
₹11406.95
100
₹197.55
₹19755.06
500
₹164.41
₹82207.14
1000
₹164.41
₹164414.27
Product Attributes
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
190mOhm @ 7.6A, 10V
4.5V @ 630µA
37 nC @ 10 V
±20V
1750 pF @ 100 V
151W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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