


Manufacturer
Infineon
Description
INFINEON - IPP60R190P6XKSA1 - Power MOSFET, N Channel, 600 V, 20.2 A, 0.19 ohm, TO-220, Through Hole
Datasheet
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
190mOhm @ 7.6A, 10V
4.5V @ 630µA
37 nC @ 10 V
±20V
1750 pF @ 100 V
151W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
₹376.63
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹376.63
₹376.63
10
₹215.04
₹2150.39
25
₹215.04
₹5375.98
50
₹210.60
₹10529.82
100
₹190.16
₹19015.53
500
₹154.33
₹77164.70
1000
₹142.82
₹142818.69
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
190mOhm @ 7.6A, 10V
4.5V @ 630µA
37 nC @ 10 V
±20V
1750 pF @ 100 V
151W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3

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