Manufacturer
Infineon
Description
Single P-Channel 30 V 11.9 mOhm 52 nC HEXFET Power Mosfet - SOIC-8
Datasheet
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SOIC
-12 A
-30 V
10 mΩ
-30 V
Single
66 ns
25 V
1.75 mm
1.68 nF
Production (Last Updated: 4 years ago)
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
1
1
8
11.9 mΩ
4000
Tape & Reel
2.5 W
No
8.5 mΩ
No SVHC
57 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
-1.8 V
80 ns
19 ns
3.9878 mm
MOQ : 1
Per Unit Price
₹100.48
Total Price
₹100.48
Ships in 7-10 days from Bengaluru
1
₹100.48
₹100.48
10
₹55.88
₹558.75
25
₹55.88
₹1396.89
50
₹38.65
₹1932.42
100
₹38.65
₹3864.84
500
₹30.79
₹15397.30
1000
₹28.03
₹28034.00
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
On-State Resistance
Package Quantity
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SOIC
-12 A
-30 V
10 mΩ
-30 V
Single
66 ns
25 V
1.75 mm
1.68 nF
Production (Last Updated: 4 years ago)
150 °C
150 °C
2.5 W
-55 °C
Surface Mount
1
1
8
11.9 mΩ
4000
Tape & Reel
2.5 W
No
8.5 mΩ
No SVHC
57 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
-1.8 V
80 ns
19 ns
3.9878 mm
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