MRF101AN
Manufacturer
NXP Semiconductors
Description
RF Power Transistor, 1.8 to 250 MHz, 100 W CW, Typ gain in dB is 23 @ 50 MHz, TO-220-3L, LDMOS
Datasheet
DownloadProduct Attributes
Type
Drain to Source Breakdown Voltage
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Schedule B
Description
133 V
133 V
10 V
19.91 mm
175 °C
175 °C
-40 °C
1
182 W
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
₹4568.60
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹4568.60
₹4568.60
10
₹3396.11
₹33961.14
25
₹3396.11
₹84902.85
50
₹3395.84
₹169791.98
100
₹3181.62
₹318161.97
500
₹3181.62
₹1590809.85
1000
₹3181.62
₹3181619.70
Product Attributes
Type
Drain to Source Breakdown Voltage
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Schedule B
Description
133 V
133 V
10 V
19.91 mm
175 °C
175 °C
-40 °C
1
182 W
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
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