Manufacturer
onsemi
Description
Single P-Channel Enhancement Mode Field Effect Transistor -20V, -6.5A, 35m
Datasheet
Type
Case/Package
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Weight
Description
SOIC
-6.7 A
-20 V
35 mΩ
20 V
Single
63 ns
8 V
2.33 nF
Lead Free
Obsolete (Last Updated: 8 months ago)
OBSOLETE (Last Updated: 8 months ago)
150 °C
1 W
-55 °C
Surface Mount
1
8
Cut Tape
2.5 W
No
35 mΩ
No
35 mΩ
38 ns
Compliant
8541290080
-700 mV
169 ns
20 ns
-20 V
230.4 mg
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
Type
Case/Package
Current Rating
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Lifecycle Status
Manufacturer Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Voltage Rating (DC)
Weight
Description
SOIC
-6.7 A
-20 V
35 mΩ
20 V
Single
63 ns
8 V
2.33 nF
Lead Free
Obsolete (Last Updated: 8 months ago)
OBSOLETE (Last Updated: 8 months ago)
150 °C
1 W
-55 °C
Surface Mount
1
8
Cut Tape
2.5 W
No
35 mΩ
No
35 mΩ
38 ns
Compliant
8541290080
-700 mV
169 ns
20 ns
-20 V
230.4 mg
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