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PMBFJ309,215
Manufacturer
NXP Semiconductors
Description
PMBFJ309 Series 25 Vds 50 mA N-Ch silicon field-effect Transistors - SOT-23
Datasheet
DownloadProduct Attributes
Type
Breakdown Voltage
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Packaging
Radiation Hardening
RoHS
Schedule B
Weight
Width
Description
-25 V
SOT-23-3
30 mA
50 Ω
25 V
Single
25 V
1 mm
5 pF
Lead Free
3 mm
150 °C
250 mW
-65 °C
Surface Mount
3
Digi-Reel®
No
Compliant
8541210080
200.998119 mg
1.4 mm
Out of Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
Product Attributes
Type
Breakdown Voltage
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Packaging
Radiation Hardening
RoHS
Schedule B
Weight
Width
Description
-25 V
SOT-23-3
30 mA
50 Ω
25 V
Single
25 V
1 mm
5 pF
Lead Free
3 mm
150 °C
250 mW
-65 °C
Surface Mount
3
Digi-Reel®
No
Compliant
8541210080
200.998119 mg
1.4 mm
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