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RFP4N05L
Manufacturer
onsemi
Description
4 A 50 V 0.8 Ohm N-channel Si Power Mosfet TO-220AB
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
4 A
50 V
800 mΩ
50 V
10 V
20.4 mm
150 °C
150 °C
-55 °C
1
25 W
Compliant
20 ns
10 ns
In Stock
Quantity
MOQ : Unavailable
Per Unit Price
₹Infinity
Total Price
₹Infinity
Ships in 7-10 days from Bengaluru
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
4 A
50 V
800 mΩ
50 V
10 V
20.4 mm
150 °C
150 °C
-55 °C
1
25 W
Compliant
20 ns
10 ns
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