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SCTW90N65G2V
Manufacturer
STMicroelectronics
Description
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Voltage (Vdss)
Lifecycle Status
Max Power Dissipation
Rds On Max
RoHS
Schedule B
Description
119 A
650 V
Production (Last Updated: 3 years ago)
565 W
24 mΩ
Compliant
8541290080
₹2080.71
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹2080.71
₹2080.71
10
₹2080.53
₹20805.27
25
₹2080.49
₹52012.26
50
₹2080.49
₹104024.52
100
₹2060.11
₹206011.38
500
₹2060.11
₹1030056.90
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Voltage (Vdss)
Lifecycle Status
Max Power Dissipation
Rds On Max
RoHS
Schedule B
Description
119 A
650 V
Production (Last Updated: 3 years ago)
565 W
24 mΩ
Compliant
8541290080
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