Cart
SCTW90N65G2V
Manufacturer
STMicroelectronics
Description
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Voltage (Vdss)
Lifecycle Status
Max Power Dissipation
Rds On Max
RoHS
Schedule B
Description
119 A
650 V
Production (Last Updated: 3 years ago)
565 W
24 mΩ
Compliant
8541290080
₹2794.50
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹2794.50
₹2794.50
10
₹2604.71
₹26047.12
25
₹2604.71
₹65117.79
50
₹2509.81
₹125490.67
100
₹2414.92
₹241491.51
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Voltage (Vdss)
Lifecycle Status
Max Power Dissipation
Rds On Max
RoHS
Schedule B
Description
119 A
650 V
Production (Last Updated: 3 years ago)
565 W
24 mΩ
Compliant
8541290080
Other Parts in the same category
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.