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SI1424EDH-T1-GE3
Manufacturer
Vishay
Description
SI1424EDH-T1-GE3 N-channel Mosfet Transistor, 4 A, 20 V, 6-PIN SOT-363
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-363
4 A
27 mΩ
20 V
1.6 µs
8 V
1.1 mm
2 mm
150 °C
2.8 W
-55 °C
Surface Mount
1
1
6
1.56 W
No
33 mΩ
No
300 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
400 mV
5.6 µs
150 ns
7.512624 mg
1.25 mm
₹53.07
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
10
₹30.77
₹307.73
25
₹30.77
₹769.33
50
₹30.77
₹1538.66
100
₹18.67
₹1867.15
500
₹15.32
₹7661.20
1000
₹14.21
₹14209.60
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOT-363
4 A
27 mΩ
20 V
1.6 µs
8 V
1.1 mm
2 mm
150 °C
2.8 W
-55 °C
Surface Mount
1
1
6
1.56 W
No
33 mΩ
No
300 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
400 mV
5.6 µs
150 ns
7.512624 mg
1.25 mm
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