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SI1427EDH-T1-GE3
Manufacturer
Vishay
Description
MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity: P Channel; Continuous
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SOT-363
2 A
-20 V
50 mΩ
20 V
2.3 µs
8 V
1 mm
Lead Free
2.2 mm
150 °C
2.8 W
-55 °C
Surface Mount
1
1
6
1.56 W
No
64 mΩ
No
400 ns
Compliant
8541290080
-400 mV
5.2 µs
90 ns
1.35 mm
₹53.98
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
10
₹20.17
₹201.70
25
₹20.17
₹504.24
50
₹20.17
₹1008.48
100
₹16.82
₹1682.04
500
₹15.33
₹7666.55
1000
₹14.31
₹14305.11
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Fall Time
Gate to Source Voltage (Vgs)
Height
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
SOT-363
2 A
-20 V
50 mΩ
20 V
2.3 µs
8 V
1 mm
Lead Free
2.2 mm
150 °C
2.8 W
-55 °C
Surface Mount
1
1
6
1.56 W
No
64 mΩ
No
400 ns
Compliant
8541290080
-400 mV
5.2 µs
90 ns
1.35 mm
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