SI1443EDH-T1-GE3
Manufacturer
Vishay
Description
MOSFET, P-CH, -30V, -4A, SOT-363-6; Transistor Polarity: P Channel; Continuous Dr
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Breakdown Voltage
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Number of Terminals
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Description
SOT-363
4 A
-30 V
54 mΩ
30 V
Single
420 ns
12 V
Production (Last Updated: 7 months ago)
150 °C
2.8 W
30 V
-55 °C
Surface Mount
-600 mV
1
1
6
6
1.6 W
No
54 mΩ
Yes
64 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
1.8 µs
40 ns
7.512624 mg
In Stock
Quantity
MOQ : 2
Per Unit Price
₹56.02
Total Price
₹112.04
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹112.04
₹112.04
10
₹32.54
₹325.45
25
₹32.54
₹813.62
50
₹32.54
₹1627.24
100
₹16.65
₹1665.47
500
₹16.65
₹8325.58
1000
₹15.98
₹15984.26
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Breakdown Voltage
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Number of Terminals
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Weight
Description
SOT-363
4 A
-30 V
54 mΩ
30 V
Single
420 ns
12 V
Production (Last Updated: 7 months ago)
150 °C
2.8 W
30 V
-55 °C
Surface Mount
-600 mV
1
1
6
6
1.6 W
No
54 mΩ
Yes
64 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
1.8 µs
40 ns
7.512624 mg
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