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SI1922EDH-T1-GE3
Manufacturer
Vishay
Description
SI1922EDH-T1-GE3 Dual N-channel Mosfet Transistor, 1.3 A, 20 V, 6-PIN SOT-363
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Lead Free
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Description
SOT-363-6
1.3 A
20 V
165 mΩ
20 V
Dual
220 ns
8 V
1.1 mm
Lead Free
150 °C
150 °C
1.25 W
-55 °C
Surface Mount
2
2
6
740 mW
No
198 mΩ
No
80 ns
Compliant
8541210080
400 mV
645 ns
22 ns
7.512624 mg
₹57.65
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
10
₹32.27
₹322.71
25
₹32.27
₹806.78
50
₹32.27
₹1613.56
100
₹22.35
₹2235.23
500
₹16.02
₹8008.95
1000
₹13.10
₹13096.80
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Lead Free
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Description
SOT-363-6
1.3 A
20 V
165 mΩ
20 V
Dual
220 ns
8 V
1.1 mm
Lead Free
150 °C
150 °C
1.25 W
-55 °C
Surface Mount
2
2
6
740 mW
No
198 mΩ
No
80 ns
Compliant
8541210080
400 mV
645 ns
22 ns
7.512624 mg
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