SI7111EDN-T1-GE3
Manufacturer
Vishay
Description
P-Channel 30 V 8.55 mOhm 52 W TrenchFET Gen III Mosfet-PowerPAK-1212-8
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Number of Channels
Number of Pins
Power Dissipation
REACH SVHC
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
17.4 A
-30 V
7.2 mΩ
-30 V
12 V
1.17 mm
150 °C
150 °C
52 W
-55 °C
1
8
4.1 W
No
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
-1.6 V
120 ns
25 ns
In Stock
Quantity
MOQ : 2
Per Unit Price
₹54.53
Total Price
₹109.06
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹109.06
₹109.06
10
₹47.12
₹471.23
25
₹47.12
₹1178.07
50
₹47.12
₹2356.14
100
₹32.76
₹3276.34
500
₹29.90
₹14948.34
1000
₹25.78
₹25784.13
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Number of Channels
Number of Pins
Power Dissipation
REACH SVHC
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
17.4 A
-30 V
7.2 mΩ
-30 V
12 V
1.17 mm
150 °C
150 °C
52 W
-55 °C
1
8
4.1 W
No
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
-1.6 V
120 ns
25 ns
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