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SIR804DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET, N CH, W DIODE, 100V, 60A, PPAK8; Transistor Polarity: N Channel; Continuous Dr
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Description
60 A
100 V
Single
11 ns
20 V
2.45 nF
Lead Free
150 °C
104 W
-55 °C
Surface Mount
1.2 V
1
1
8
6.25 W
No
7.2 mΩ
Unknown
7.2 mΩ
9 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
1.2 V
38 ns
11 ns
506.605978 mg
₹190.32
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹190.32
₹190.32
10
₹161.59
₹1615.89
25
₹161.55
₹4038.81
50
₹161.55
₹8077.62
100
₹127.28
₹12727.65
500
₹127.28
₹63638.25
1000
₹126.30
₹126297.45
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Nominal Vgs
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Description
60 A
100 V
Single
11 ns
20 V
2.45 nF
Lead Free
150 °C
104 W
-55 °C
Surface Mount
1.2 V
1
1
8
6.25 W
No
7.2 mΩ
Unknown
7.2 mΩ
9 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
1.2 V
38 ns
11 ns
506.605978 mg
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