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SIS413DN-T1-GE3
Manufacturer
Vishay
Description
Power MOSFET, P Channel, 30 V, 18 A, 0.0076 ohm, PowerPAK 1212, Surface Mount
Datasheet
DownloadProduct Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
-14.7 A
-30 V
7.6 mΩ
-30 V
Single
8 ns
20 V
1.17 mm
4.28 nF
150 °C
150 °C
52 W
-55 °C
Surface Mount
1
8
Digi-Reel®
3.7 W
No
9.4 mΩ
No
11 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
-2.5 V
45 ns
11 ns
₹77.32
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
10
₹49.76
₹497.55
25
₹49.76
₹1243.88
50
₹41.88
₹2093.99
100
₹33.99
₹3399.39
500
₹24.21
₹12107.05
1000
₹24.21
₹24214.10
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Packaging
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Rise Time
RoHS
Schedule B
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Description
-14.7 A
-30 V
7.6 mΩ
-30 V
Single
8 ns
20 V
1.17 mm
4.28 nF
150 °C
150 °C
52 W
-55 °C
Surface Mount
1
8
Digi-Reel®
3.7 W
No
9.4 mΩ
No
11 ns
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
-2.5 V
45 ns
11 ns
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