Manufacturer
Semikron
Description
Insulated Gate Bipolar Transistor, 260A I(C), 1200V V(BR)CES, N-Channel
Datasheet
Type
Case/Package
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Element Configuration
Height
Input Capacitance
Length
Max Collector Current
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
REACH SVHC
Rise Time
RoHS
Width
Description
Module
1.2 kV
2.15 V
1.2 kV
Dual
30 mm
10.8 nF
106.4 mm
260 A
150 °C
220 W
-40 °C
Panel, Screw
7
No SVHC
40 ns
Compliant
61.4 mm
MOQ : Unavailable
Per Unit Price
₹Infinity
Total Price
₹Infinity
Ships in 7-10 days from Bengaluru
Type
Case/Package
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Element Configuration
Height
Input Capacitance
Length
Max Collector Current
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
REACH SVHC
Rise Time
RoHS
Width
Description
Module
1.2 kV
2.15 V
1.2 kV
Dual
30 mm
10.8 nF
106.4 mm
260 A
150 °C
220 W
-40 °C
Panel, Screw
7
No SVHC
40 ns
Compliant
61.4 mm
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