Cart
STB4NK60Z-1
Manufacturer
STMicroelectronics
Description
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in I2PAK
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-262-3
4 A
600 V
2 Ω
600 V
Single
16.5 ns
30 V
510 pF
Production (Last Updated: 4 years ago)
150 °C
70 W
-55 °C
Through Hole
3
70 W
No
2 Ω
9.5 ns
Compliant
29 ns
12 ns
₹40.34
Out of Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Rise Time
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-262-3
4 A
600 V
2 Ω
600 V
Single
16.5 ns
30 V
510 pF
Production (Last Updated: 4 years ago)
150 °C
70 W
-55 °C
Through Hole
3
70 W
No
2 Ω
9.5 ns
Compliant
29 ns
12 ns
Other Parts in the same category
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.