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STD4NK60Z-1
Manufacturer
STMicroelectronics
Description
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in IPAK
Datasheet
DownloadProduct Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-251-3
4 A
600 V
2 Ω
600 V
Single
16.5 ns
30 V
510 pF
Lead Free
Production (Last Updated: 4 years ago)
150 °C
70 W
-55 °C
Through Hole
1
3
70 W
No
2 Ω
2 Ω
9.5 ns
Compliant
8541290080
29 ns
12 ns
₹92.87
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
10
₹79.97
₹799.71
25
₹79.99
₹1999.73
50
₹79.99
₹3999.47
100
₹52.97
₹5296.94
500
₹52.97
₹26483.76
Product Attributes
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Input Capacitance
Lead Free
Lifecycle Status
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
Resistance
Rise Time
RoHS
Schedule B
Turn-Off Delay Time
Turn-On Delay Time
Description
TO-251-3
4 A
600 V
2 Ω
600 V
Single
16.5 ns
30 V
510 pF
Lead Free
Production (Last Updated: 4 years ago)
150 °C
70 W
-55 °C
Through Hole
1
3
70 W
No
2 Ω
2 Ω
9.5 ns
Compliant
8541290080
29 ns
12 ns
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