logo
cart
left chevron
Up ChevronDown Chevron
right chevron

ZXTP19100CGTA

Manufacturer

Diodes Inc.

Description

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

Datasheet

download datasheetDownload

Product Attributes

Type

Case/Package

China RoHS

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Continuous Collector Current

Element Configuration

Emitter Base Voltage (VEBO)

Frequency

Gain Bandwidth Product

Height

hFE Min

Lead Free

Length

Lifecycle Status

Max Breakdown Voltage

Max Collector Current

Max Frequency

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Elements

Number of Pins

Number of Terminals

Packaging

Polarity

Power Dissipation

Radiation Hardening

REACH SVHC

RoHS

Schedule B

Transition Frequency

Weight

Width

Description

SOT-223

Non-Compliant

110 V

100 V

-130 mV

100 V

-2 A

Single

-7 V

142 MHz

142 MHz

1.65 mm

20

Lead Free

6.7 mm

Production (Last Updated: 7 months ago)

100 V

2 A

142 MHz

150 °C

10.2 W

-55 °C

Surface Mount

1

4

4

Tape & Reel (TR)

PNP

5.3 W

No

No SVHC

Compliant

8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

142 MHz

7.994566 mg

3.7 mm

171.10

Out of Stock


Quantity
Shipment
delivery

Ships in 7-10 days

Out of stock

Quantity

Unit Price

Ext. Price

1

171.10

171.10

10

107.60

1076.04

25

90.62

2265.54

50

80.12

4005.87

100

71.23

7123.27

500

71.23

35616.38

1000

50.60

50598.58

Product Attributes

Type

Case/Package

China RoHS

Collector Base Voltage (VCBO)

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Emitter Voltage (VCEO)

Continuous Collector Current

Element Configuration

Emitter Base Voltage (VEBO)

Frequency

Gain Bandwidth Product

Height

hFE Min

Lead Free

Length

Lifecycle Status

Max Breakdown Voltage

Max Collector Current

Max Frequency

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Elements

Number of Pins

Number of Terminals

Packaging

Polarity

Power Dissipation

Radiation Hardening

REACH SVHC

RoHS

Schedule B

Transition Frequency

Weight

Width

Description

SOT-223

Non-Compliant

110 V

100 V

-130 mV

100 V

-2 A

Single

-7 V

142 MHz

142 MHz

1.65 mm

20

Lead Free

6.7 mm

Production (Last Updated: 7 months ago)

100 V

2 A

142 MHz

150 °C

10.2 W

-55 °C

Surface Mount

1

4

4

Tape & Reel (TR)

PNP

5.3 W

No

No SVHC

Compliant

8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080

142 MHz

7.994566 mg

3.7 mm

Other Parts in the same category

2SA1943N(S1,E,S)

2SA1943N(S1,E,S)

Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon

TIP122G

TIP122G

Bipolar junction transistor, NPN, 5 A, 100 ## Fehler ##, THT, TO-220, TIP122G

TTC5200(Q)

TTC5200(Q)

Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL

TTC5200

TTC5200

TRANS NPN 230V 15A TO-3PL / Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL

NSVTB60BDW1T1G

NSVTB60BDW1T1G

Pnp General Purpose And Npn Bias Resistor Transistor Combination/ Reel |Onsemi NSVTB60BDW1T1G

2SC5200-O(Q)

2SC5200-O(Q)

Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole

orange wave graphic

prototype to production:
With you at every step

From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.

orange wave graphic