Manufacturer
onsemi
Description
Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
Datasheet
DownloadType
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Element Configuration
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
hFE Min
Lead Free
Lifecycle Status
Manufacturer Lifecycle Status
Max Collector Current
Max Frequency
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
Radiation Hardening
RoHS
Schedule B
Transition Frequency
Weight
Description
TO-264
-250 V
-250 V
-400 mV
-250 V
Tin
Single
-5 V
30 MHz
30 MHz
29 mm
55
Lead Free
Obsolete (Last Updated: 3 months ago)
OBSOLETE (Last Updated: 3 months ago)
-17 A
30 MHz
150 °C
150 °C
150 W
-50 °C
Through Hole
1
3
PNP
150 W
No
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
30 MHz
6.756 g
Type
Case/Package
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Contact Plating
Element Configuration
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
hFE Min
Lead Free
Lifecycle Status
Manufacturer Lifecycle Status
Max Collector Current
Max Frequency
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
Radiation Hardening
RoHS
Schedule B
Transition Frequency
Weight
Description
TO-264
-250 V
-250 V
-400 mV
-250 V
Tin
Single
-5 V
30 MHz
30 MHz
29 mm
55
Lead Free
Obsolete (Last Updated: 3 months ago)
OBSOLETE (Last Updated: 3 months ago)
-17 A
30 MHz
150 °C
150 °C
150 W
-50 °C
Through Hole
1
3
PNP
150 W
No
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
30 MHz
6.756 g
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