IAUCN04S7L023HATMA1
Manufacturer
Infineon
Description
INFINEON - IAUCN04S7L023HATMA1 - Dual MOSFET, Dual N Channel, 40 V, 100 A, 0.00234 ohm
Datasheet
DownloadProduct Attributes
Type
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Continuous Collector Current
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Input Capacitance
Power - Max
Max Operating Temperature
Grade
Qualification
Mounting Type
Case/Package
Packaging
Description
MOSFET (Metal Oxide)
2 N-Channel
Logic Level Gate
40V
100A (Tj)
2.34mOhm @ 50A, 10V
1.8V @ 25µA
38nC @ 10V
2518pF @ 20V
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
₹299.01
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹299.01
₹299.01
10
₹146.67
₹1466.68
25
₹146.67
₹3666.69
50
₹146.67
₹7333.38
100
₹131.89
₹13188.77
500
₹105.16
₹52580.15
1000
₹100.84
₹100840.60
Product Attributes
Type
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Continuous Collector Current
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Input Capacitance
Power - Max
Max Operating Temperature
Grade
Qualification
Mounting Type
Case/Package
Packaging
Description
MOSFET (Metal Oxide)
2 N-Channel
Logic Level Gate
40V
100A (Tj)
2.34mOhm @ 50A, 10V
1.8V @ 25µA
38nC @ 10V
2518pF @ 20V
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
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