IAUCN04S7L023HATMA1
Manufacturer
Infineon
Description
INFINEON - IAUCN04S7L023HATMA1 - Dual MOSFET, Dual N Channel, 40 V, 100 A, 0.00234 ohm
Datasheet
DownloadProduct Attributes
Type
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Continuous Collector Current
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Input Capacitance
Power - Max
Max Operating Temperature
Grade
Qualification
Mounting Type
Case/Package
Packaging
Description
MOSFET (Metal Oxide)
2 N-Channel
Logic Level Gate
40V
100A (Tj)
2.34mOhm @ 50A, 10V
1.8V @ 25µA
38nC @ 10V
2518pF @ 20V
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
₹164.66
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹164.66
₹164.66
10
₹109.63
₹1096.35
25
₹109.63
₹2740.87
50
₹109.63
₹5481.74
100
₹91.64
₹9164.19
500
₹88.14
₹44071.65
1000
₹115.32
₹115322.90
Product Attributes
Type
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Continuous Collector Current
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Input Capacitance
Power - Max
Max Operating Temperature
Grade
Qualification
Mounting Type
Case/Package
Packaging
Description
MOSFET (Metal Oxide)
2 N-Channel
Logic Level Gate
40V
100A (Tj)
2.34mOhm @ 50A, 10V
1.8V @ 25µA
38nC @ 10V
2518pF @ 20V
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-PowerVDFN
PG-TDSON-8-56
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