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IPW60R041P6FKSA1

Manufacturer

Infineon

Description

INFINEON - IPW60R041P6FKSA1 - Power MOSFET, N Channel, 600 V, 77.5 A, 0.041 ohm, TO-247, Through Hole

Datasheet

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Product Attributes

Type

Reference Type

Technology

Drain to Source Voltage (Vdss)

Continuous Collector Current

Drive Voltage (Max Rds On, Min Rds On)

Rds On Max

Vgs(th) (Max) @ Id

Max Charge Current

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

Max Power Dissipation

Max Operating Temperature

Mounting Type

Packaging

Case/Package

Description

N-Channel

MOSFET (Metal Oxide)

600 V

77.5A (Tc)

10V

41mOhm @ 35.5A, 10V

4.5V @ 2.96mA

170 nC @ 10 V

±20V

8180 pF @ 100 V

481W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

1223.12

In Stock


Quantity
Shipment
delivery

Ships in 7-10 days

Quantity

Unit Price

Ext. Price

1

1223.12

1223.12

10

724.68

7246.77

25

724.68

18116.92

50

724.68

36233.83

100

666.25

66624.79

Product Attributes

Type

Reference Type

Technology

Drain to Source Voltage (Vdss)

Continuous Collector Current

Drive Voltage (Max Rds On, Min Rds On)

Rds On Max

Vgs(th) (Max) @ Id

Max Charge Current

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

Max Power Dissipation

Max Operating Temperature

Mounting Type

Packaging

Case/Package

Description

N-Channel

MOSFET (Metal Oxide)

600 V

77.5A (Tc)

10V

41mOhm @ 35.5A, 10V

4.5V @ 2.96mA

170 nC @ 10 V

±20V

8180 pF @ 100 V

481W (Tc)

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

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