IXFH16N80P
Manufacturer
IXYS
Description
IXYS SEMICONDUCTOR - IXFH16N80P - Power MOSFET, N Channel, 800 V, 16 A, 0.6 ohm, TO-247, Through Hole
Datasheet
DownloadProduct Attributes
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
MOSFET (Metal Oxide)
800 V
16A (Tc)
10V
600mOhm @ 500mA, 10V
5V @ 4mA
71 nC @ 10 V
±30V
4600 pF @ 25 V
460W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
₹1420.40
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹1420.40
₹1420.40
10
₹843.08
₹8430.82
25
₹843.08
₹21077.04
50
₹802.35
₹40117.74
100
₹768.87
₹76887.19
Product Attributes
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
MOSFET (Metal Oxide)
800 V
16A (Tc)
10V
600mOhm @ 500mA, 10V
5V @ 4mA
71 nC @ 10 V
±30V
4600 pF @ 25 V
460W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
Other Parts in the same category
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.