MMBT2222AT
Manufacturer
onsemi
Description
Bipolar Transistors - BJT NPN GENERAL PURPOSE AMPLIFIER
Datasheet
DownloadProduct Attributes
Type
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Element Configuration
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
hFE Min
Lead Free
Length
Max Breakdown Voltage
Max Collector Current
Max Frequency
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
RoHS
Schedule B
Transition Frequency
Weight
Width
Description
75 V
40 V
1 V
40 V
Single
6 V
300 MHz
300 MHz
780 µm
75
Lead Free
1.7 mm
40 V
600 mA
100 MHz
150 °C
250 mW
-55 °C
Surface Mount
1
3
NPN
250 mW
Compliant
8541210080
300 MHz
30 mg
980 µm
In Stock
Quantity
MOQ : Unavailable
Per Unit Price
₹Infinity
Total Price
₹Infinity
Ships in 7-10 days from Bengaluru
Product Attributes
Type
Collector Base Voltage (VCBO)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Emitter Voltage (VCEO)
Element Configuration
Emitter Base Voltage (VEBO)
Frequency
Gain Bandwidth Product
Height
hFE Min
Lead Free
Length
Max Breakdown Voltage
Max Collector Current
Max Frequency
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Elements
Number of Pins
Polarity
Power Dissipation
RoHS
Schedule B
Transition Frequency
Weight
Width
Description
75 V
40 V
1 V
40 V
Single
6 V
300 MHz
300 MHz
780 µm
75
Lead Free
1.7 mm
40 V
600 mA
100 MHz
150 °C
250 mW
-55 °C
Surface Mount
1
3
NPN
250 mW
Compliant
8541210080
300 MHz
30 mg
980 µm
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