NTBG014N120M3P
Manufacturer
onsemi
Description
ONSEMI - NTBG014N120M3P - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 104 A, 1.2 kV, 0.014 ohm, TO-263 (D2PAK)
Datasheet
DownloadProduct Attributes
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
SiCFET (Silicon Carbide)
1200 V
104A (Tc)
15V, 18V
20mOhm @ 74A, 18V
4.63V @ 37mA
337 nC @ 18 V
+22V, -10V
6313 pF @ 800 V
454W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
₹3693.07
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹3693.07
₹3693.07
10
₹2836.32
₹28363.17
25
₹2836.30
₹70907.47
50
₹2829.95
₹141497.65
100
₹2778.42
₹277841.58
500
₹2642.65
₹1321323.77
1000
₹2269.95
₹2269952.13
Product Attributes
Type
Reference Type
Technology
Drain to Source Voltage (Vdss)
Continuous Collector Current
Drive Voltage (Max Rds On, Min Rds On)
Rds On Max
Vgs(th) (Max) @ Id
Max Charge Current
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Max Power Dissipation
Max Operating Temperature
Mounting Type
Packaging
Case/Package
Description
N-Channel
SiCFET (Silicon Carbide)
1200 V
104A (Tc)
15V, 18V
20mOhm @ 74A, 18V
4.63V @ 37mA
337 nC @ 18 V
+22V, -10V
6313 pF @ 800 V
454W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Other Parts in the same category
prototype to production:
With you at every step
From initial concept to final product, we ensure seamless support at every stage of your manufacturing journey.