Manufacturer
Texas Instruments
Description
100-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 61 mOhm 8-VSONP -55 to 150
Datasheet
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Power Dissipation
Rds On Max
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
4.9 A
100 V
49 mΩ
100 V
Single
20 V
900 µm
454 pF
Lead Free
3.3 mm
Production (Last Updated: 6 days ago)
ACTIVE (Last Updated: 6 days ago)
150 °C
150 °C
2.8 W
-55 °C
Surface Mount
1
8
2.8 W
59 mΩ
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
800 µm
7 ns
5 ns
3.3 mm
MOQ : 2
Minimum Qty : 2
Per Unit Price
₹64.40
Total Price
₹128.80
Ships in 7-10 days from Bengaluru
1
₹128.80
₹128.80
10
₹46.14
₹461.39
25
₹46.17
₹1154.36
50
₹46.16
₹2307.84
100
₹32.35
₹3235.03
500
₹28.23
₹14112.55
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Lifecycle Status
Manufacturer Lifecycle Status
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Pins
Power Dissipation
Rds On Max
RoHS
Schedule B
Thickness
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
4.9 A
100 V
49 mΩ
100 V
Single
20 V
900 µm
454 pF
Lead Free
3.3 mm
Production (Last Updated: 6 days ago)
ACTIVE (Last Updated: 6 days ago)
150 °C
150 °C
2.8 W
-55 °C
Surface Mount
1
8
2.8 W
59 mΩ
Compliant
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
800 µm
7 ns
5 ns
3.3 mm
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