IGLD60R190D1AUMA3
Manufacturer
Infineon
Description
600V 23A 190 mOhm N-ch CoolGaN Enhancement-Mode Power Transistor
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
10 A
800 V
140 mΩ
600 V
-10 V
1.35 mm
150 °C
150 °C
-55 °C
1
62.5 W
Compliant
8 ns
6 ns
In Stock
Quantity
MOQ : 1
Per Unit Price
₹553.08
Total Price
₹553.08
Ships in 7-10 days from Bengaluru
Quantity
Unit Price
Ext. Price
1
₹553.08
₹553.08
10
₹413.92
₹4139.23
25
₹413.87
₹10346.73
50
₹370.12
₹18506.03
100
₹326.35
₹32634.53
500
₹326.35
₹163172.65
1000
₹288.29
₹288287.53
Product Attributes
Type
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Gate to Source Voltage (Vgs)
Height
Max Junction Temperature (Tj)
Max Operating Temperature
Min Operating Temperature
Number of Channels
Power Dissipation
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Description
10 A
800 V
140 mΩ
600 V
-10 V
1.35 mm
150 °C
150 °C
-55 °C
1
62.5 W
Compliant
8 ns
6 ns
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